Microprobe as implanter for semiconductor devices

An ion microprobe focuses a wide range of ion species and ion energies, thu s allowing to produce structures by maskless implantation. This is a great advantage in the production of prototype devices. The microprobe being very attractive in scientific investigations has the drawback of serial writing if industrial application is asked for. In this paper we introduce a high energy ion projector (1) device that allows to implant large structures sim ultaneously. The Bochum microprobe equipped with a 8 T superconducting sole noid is able to focus ions with an energy mass product of 20 MeVu/q(2) to a beamspot below 1 mu m. A computer controlled electrostatic octopole is use d as active self-correcting scanning unit, as stigmator and as active corre ctor for ion projection method. The properties of the system have been inve stigated by means of simulations and were tested experimentally. As an appl ication the synthesis of buried silicides by implantation of Ti is describe d. (C) 1999 Elsevier Science B.V. All rights reserved.