Ion beam Induced charge collection (IBICC) of integrated circuits using a 10 MeV carbon microbeam

Authors
McDaniel, FD Guo, BN Renfrow, SN El Bouanani, M Duggan, JL Doyle, BL Walsh, DS Aton, TJ
Citation
Fd. Mcdaniel et al., Ion beam Induced charge collection (IBICC) of integrated circuits using a 10 MeV carbon microbeam, NUCL INST B, 158(1-4), 1999, pp. 264-269
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
158
Issue
1-4
Year of publication
1999
Pages
264 - 269
Database
ISI
SICI code
0168-583X(199909)158:1-4<264:IBICC(>2.0.ZU;2-L
Abstract
This paper presents ion beam induced charge collection (IBICC) data that si mulates cosmic neutron-induced Si recoil effects in TC test structures. The experiments, conducted at Sandia National Laboratories, employed a 10 MeV Carbon microbeam with 1 mu m diameter spot to scan test: structure on speci fically designed ICs. The test structure contains junctions typical of SRAM s and DRAMs. With the aid of IC layout information, an analysis of the char ge collection efficiency from different: test areas is given. (C) 1999 Else vier Science B.V. All rights reserved.