Citation
N. Schone et al., Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics, NUCL INST B, 158(1-4), 1999, pp. 424-431
Citations number
12
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
158
Issue
1-4
Year of publication
1999
Pages
424 - 431
Database
ISI
SICI code
0168-583X(199909)158:1-4<424:TIBICC>2.0.ZU;2-N
Abstract
A focused 12-MeV carbon ion micro-beam was used to acquire multiple single
ion transients at various locations of a single CMOS transistor. Complete c
urrent transients induced by single ions were measured at a 5 GPIz analog b
andwidth, The current transients reveal clear and discernible contributions
of drift and diffusive charge collection. Estimates are presented for the
drift assisted, funneling charge collection depth. Radiation damage effects
on drift and diffusive charge collection are reported. Transients measured
for drain and off-drain ion strikes compare well to 3D DAVINCI calculation
s, (C) 1999 Published by Elsevier Science B.V. All rights reserved.