Reliability testing for the next generation of ULSI with SOI MOSFETs

Authors
Takai, M Nakayama, K Takaoka, H Iwamatsu, T Yamaguchi, Y Maegawa, S Nishimura, T Kinomura, A Horino, Y
Citation
M. Takai et al., Reliability testing for the next generation of ULSI with SOI MOSFETs, NUCL INST B, 158(1-4), 1999, pp. 432-436
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
158
Issue
1-4
Year of publication
1999
Pages
432 - 436
Database
ISI
SICI code
0168-583X(199909)158:1-4<432:RTFTNG>2.0.ZU;2-5
Abstract
The reliability of partially depleted SOI MOSFETs against ion strikes has b een investigated using a high energy nuclear microprobe. Transient SOI MOSF ET behaviour during ion strike has been compared with that obtained by thre e-dimensional computer simulation, Both SOI MOSFET structures with and without a floating body have been teste d to investigate the mechanism of transient MOSFET upset behaviour against ion beam strikes, resulting in SOI DRAM SEU. (C) 1999 Elsevier Science B.V. All rights reserved.