Scanning ion deep level transient spectroscopy

We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. T he technique known here as Scanning Ion Deep Level Transient Spectroscopy ( SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscop y (DLTS). In SIDLTS, the electron-hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensiti vity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted An-Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity. ( C) 1999 Published by Elsevier Science B.V. All rights reserved.