Production and characterization of Ti : sapphire thin films grown by reactive laser ablation with elemental precursors

Authors
Willmott, PR Manoravi, P Huber, JR Greber, T Murray, TA Holliday, K
Citation
Pr. Willmott et al., Production and characterization of Ti : sapphire thin films grown by reactive laser ablation with elemental precursors, OPTICS LETT, 24(22), 1999, pp. 1581-1583
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS LETTERS
ISSN journal
01469592 → ACNP
Volume
24
Issue
22
Year of publication
1999
Pages
1581 - 1583
Database
ISI
SICI code
0146-9592(19991115)24:22<1581:PACOT:>2.0.ZU;2-A
Abstract
Crystalline Ti:sapphire (Ti:Al2O3) thin films were grown at low temperature s upon Al2O3 (0001) substrates by reactive crossed-beam laser ablation at 2 48 nm by use of a liquid Ti-Al alloy target and O-2. The films were investi gated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and R utherford backscattering spectrometry. Low-temperature luminescence was ide ntical to that for Ti3+ ions in bulk samples of Al2O3. (C) 1999 Optical Soc iety of America.