Mechanism of the germyl Wright-West anionic migration. Ab initio theoretical study of counterion effects and comparison with the analogous silyl and methyl (Wittig) rearrangements

Citation
P. Antoniotti et G. Tonachini, Mechanism of the germyl Wright-West anionic migration. Ab initio theoretical study of counterion effects and comparison with the analogous silyl and methyl (Wittig) rearrangements, ORGANOMETAL, 18(22), 1999, pp. 4538-4544
Citations number
38
Categorie Soggetti
Organic Chemistry/Polymer Science
Journal title
ORGANOMETALLICS
ISSN journal
02767333 → ACNP
Volume
18
Issue
22
Year of publication
1999
Pages
4538 - 4544
Database
ISI
SICI code
0276-7333(19991025)18:22<4538:MOTGWA>2.0.ZU;2-Z
Abstract
The mechanism of the [1,2] germyl rearrangement in the (H2COGeH3)Li model s ystem is studied and compared with the results previously obtained for (1) the corresponding free anion model and (2) the two formally similar silyl a nd methyl migrations. The mechanism of the germanium rearrangement is found to diverge from both of these. The nondissociative rearrangement pathway i s a one-step [1,2] Ge shift and does not involve a cyclic intermediate, in contrast with the two-step mechanism of the silicon migration. A transition structure with pentacoordinate Ge, similar to the cyclic intermediate foun d for Si, is located ca. 17 kcal mol(-1) above the initial lithiated carban ion. The energy shoulder previously found in the free anion Ge system, in c orrespondence of such a geometry, completely disappears when Lif interacts with the anionic system. As the energy barrier is raised with respect to th e anion, where it was only 2 kcal mol(-1) high, the transition structure be comes later, in a geometrical sense. Concurrently, the exoergicity (Delta E = -24 kcal mol(-1)) is reduced to some extent with respect to the free ani on (Delta E = -30 kcal mol(-1)). A dissociation/reassociation pathway is th en explored, which leads, via O-Ge bond cleavage, to a rather stable comple x between the two H2CO and LiGeH3 moieties (-10 kcal mol(-1)). However, sim ilarly to silicon, the energy barrier for the dissociative process (ca. 30 kcal mol(-1)) is higher (by 13 kcal mol(-1)) than that for direct germyl mi gration, which is as a consequence the preferred pathway. Also in the free anion the dissociation pathway was required to overcome an energy barrier h igher than that for direct [1,2] shift by 8 kcal mol(-1). A similar situati on had been found for silicon too. This result contrasts the description re cently obtained for the Wittig carbon re arrangement that shows a sharp pre ference for a dissociation/reassociation mechanism.