Mechanism of the germyl Wright-West anionic migration. Ab initio theoretical study of counterion effects and comparison with the analogous silyl and methyl (Wittig) rearrangements
P. Antoniotti et G. Tonachini, Mechanism of the germyl Wright-West anionic migration. Ab initio theoretical study of counterion effects and comparison with the analogous silyl and methyl (Wittig) rearrangements, ORGANOMETAL, 18(22), 1999, pp. 4538-4544
The mechanism of the [1,2] germyl rearrangement in the (H2COGeH3)Li model s
ystem is studied and compared with the results previously obtained for (1)
the corresponding free anion model and (2) the two formally similar silyl a
nd methyl migrations. The mechanism of the germanium rearrangement is found
to diverge from both of these. The nondissociative rearrangement pathway i
s a one-step [1,2] Ge shift and does not involve a cyclic intermediate, in
contrast with the two-step mechanism of the silicon migration. A transition
structure with pentacoordinate Ge, similar to the cyclic intermediate foun
d for Si, is located ca. 17 kcal mol(-1) above the initial lithiated carban
ion. The energy shoulder previously found in the free anion Ge system, in c
orrespondence of such a geometry, completely disappears when Lif interacts
with the anionic system. As the energy barrier is raised with respect to th
e anion, where it was only 2 kcal mol(-1) high, the transition structure be
comes later, in a geometrical sense. Concurrently, the exoergicity (Delta E
= -24 kcal mol(-1)) is reduced to some extent with respect to the free ani
on (Delta E = -30 kcal mol(-1)). A dissociation/reassociation pathway is th
en explored, which leads, via O-Ge bond cleavage, to a rather stable comple
x between the two H2CO and LiGeH3 moieties (-10 kcal mol(-1)). However, sim
ilarly to silicon, the energy barrier for the dissociative process (ca. 30
kcal mol(-1)) is higher (by 13 kcal mol(-1)) than that for direct germyl mi
gration, which is as a consequence the preferred pathway. Also in the free
anion the dissociation pathway was required to overcome an energy barrier h
igher than that for direct [1,2] shift by 8 kcal mol(-1). A similar situati
on had been found for silicon too. This result contrasts the description re
cently obtained for the Wittig carbon re arrangement that shows a sharp pre
ference for a dissociation/reassociation mechanism.