Biexciton versus exciton lifetime in a single semiconductor quantum dot

Citation
G. Bacher et al., Biexciton versus exciton lifetime in a single semiconductor quantum dot, PHYS REV L, 83(21), 1999, pp. 4417-4420
Citations number
22
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
21
Year of publication
1999
Pages
4417 - 4420
Database
ISI
SICI code
0031-9007(19991122)83:21<4417:BVELIA>2.0.ZU;2-U
Abstract
The decay characteristics of excitons and biexcitons in one single semicond uctor quantum dot (QD) are directly monitored using time- and spatially res olved photoluminescence spectroscopy. The experiments are performed on a Cd Se/ZnSe QD, occupied by either one or two excitons at a time, allowing a di rect comparison between the radiative lifetime of a biexciton and an excito n confined in the same QD. The rather surprising result of comparable recom bination rates for both states is related to the spatial wave function dist ribution and the spin structure of the particles and their coupling to the photon field, i.e., the superradiance effect.