Some semiconductor properties of carboxymethyl cellulose-copper complexes

Citation
H. El-saied et al., Some semiconductor properties of carboxymethyl cellulose-copper complexes, POLYM-PLAST, 38(5), 1999, pp. 1095-1105
Citations number
16
Categorie Soggetti
Material Science & Engineering
Journal title
POLYMER-PLASTICS TECHNOLOGY AND ENGINEERING
ISSN journal
03602559 → ACNP
Volume
38
Issue
5
Year of publication
1999
Pages
1095 - 1105
Database
ISI
SICI code
0360-2559(1999)38:5<1095:SSPOCC>2.0.ZU;2-I
Abstract
Metal chelates of three grades of carboxymethyl cellulose (CMC) (L-1-L-3) W ith CU(II) ions, either originating from CuCl2 or CuSO4, were prepared and characterized by elemental analysis, infrared spectra, and electrical condu ctivity studies. The results showed that the degree of substitution of CMCs and the origin of the Cu(II) ion have a profound effect on the amount of m etal included in the polymer complexes and the structure and the electrical conductivity of the prepared complexes. CMC acts as a uninegatively charge d bidentate ligand when it is chelated with Cu(II) of CuCl2 via the carboxy methyl group and exhibits the formula Cu(L)(2), whereas it acts as a binega tively charged bitentate Ligand when it is chelated with CuSO4 via the carb oxymethyl and secondary hydroxyl groups and exhibits the formula CuL . 2H(2 )O. The investigation revealed that the electrical conductivity depends on the temperature and has two maximum peaks. The values of the activation ene rgy for the conductivity of CMC and their complexes indicated that the samp les changed from a low-semiconductor to a high-semiconductor property with heating. It is found that CMC-Cu(II) complexes formed from CuSO4 exhibit a high-semiconductor property compared to complexes derived from CuCl2.