Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

We report the successful fabrication of a V-groove Al0.5Ga0.5As/GaAs/Al0.5G a0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642 , 635 and 621 nm attributed to the luminescences from quantum wire, top, ve rtical and side-wall well regions by micro-PL measurements. By the calculat ions of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been o btained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature depend ence in the photoluminescence measurements. (C) 1999 Academic Press.