Poly(3-pentylmethoxythiophene) /Alq3 heterostructure light emitting diodes

Citation
A. Bolognesi et al., Poly(3-pentylmethoxythiophene) /Alq3 heterostructure light emitting diodes, SYNTH METAL, 106(3), 1999, pp. 183-186
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
106
Issue
3
Year of publication
1999
Pages
183 - 186
Database
ISI
SICI code
0379-6779(19991029)106:3<183:P/HLED>2.0.ZU;2-A
Abstract
The electroluminescence efficiency of an organic light emitting diode (OLED ) based on poly(3-pentylmethoxythiophene) (P5OMe) is improved by two orders of magnitude by employing the heterostructure architecture realized with a thin layer of tris(8-hydroxy)quinoline aluminium (Alq3), which acts as bot h electron transport and emitting layer. The emission can be tuned from the red to the green spectral region by varying the applied voltage. An additi onal emission observed both in photoluminescence and electroluminescence at the polymer/Alq3 interface is tentatively assigned to exciplex emission. ( C) 1999 Elsevier Science S.A. All rights reserved.