The first experiments on the growth of single-crystal layers of zinc oxide
on nonorienting substrates (crystalline leucosapphire and fused quartz) by
chemical transport reactions in a reduced-pressure flow-through reactor in
a hydrogen atmosphere is reported. To ensure autoepitaxy on a surface of a
nonorienting substrate, an optimized intermediate layer of zinc oxide of th
ickness 200-1000 Angstrom, which provides a texture of basal orientation re
gardless of the orienting properties of the substrate, is preliminarily dep
osited by magnetron sputtering. It is shown that the subsequent growth of l
ayers on such a surface by a chemical transport reaction to a thickness of
1-5 ensures high structural perfection, uniformity, and a very smooth surfa
ce, while polycrystalline films are deposited on the portion of the surface
without a buffer layer. The proposed method can be used to grow heteroepit
axial structures and other electronic materials on nonorienting substrates
using chemical transport reactions. (C) 1999 American Institute of Physics.
[S1063-7842(99)02711-7].