Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part II

The universal capabilities of high resolution spot profile analysis low ene rgy electron diffraction for in situ studies of surface morphology and surf ace defects will be discussed and demonstrated. The position of the diffrac tion spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 Angstrom. With the knowledge of the spot profile we could determine island and domain size distributions - even during deposition - and correlation functions of arbi trary surface defects. The variation of the spot profile with electron ener gy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of fl at and vicinal surfaces could be completely characterised.