Intersubband relaxation time for InxGa1-xAs/AlAs quantum wells with large transition energy

Authors
Ghislotti, G Riedo, E Ielmini, D Martinelli, M
Citation
G. Ghislotti et al., Intersubband relaxation time for InxGa1-xAs/AlAs quantum wells with large transition energy, APPL PHYS L, 75(23), 1999, pp. 3626-3628
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
23
Year of publication
1999
Pages
3626 - 3628
Database
ISI
SICI code
0003-6951(199912)75:23<3626:IRTFIQ>2.0.ZU;2-E
Abstract
Intersubband relaxation time for InxGa1-xAs/AlAs multiple quantum wells pre senting a large transition energy (680 meV) is measured by means of pump an d probe experiments. Differential transmission decays in about 10 ps. The p ossible influence of intrasubband relaxation and Gamma-X coupling on inters ubband decay is discussed. (C) 1999 American Institute of Physics. [S0003-6 951(99)01749-0].