High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

Authors
Damlencourt, JF Leclercq, JL Gendry, M Regreny, P Hollinger, G
Citation
Jf. Damlencourt et al., High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach, APPL PHYS L, 75(23), 1999, pp. 3638-3640
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
23
Year of publication
1999
Pages
3638 - 3640
Database
ISI
SICI code
0003-6951(199912)75:23<3638:HFRILG>2.0.ZU;2-T
Abstract
Thin and thick fully relaxed In0.65Ga0.35As layers have been grown on InP s ubstrates (0.81% misfit), with high structural and high optoelectronic qual ity at an operating wavelength of similar to 2.0 mu m. Full relaxation is a chieved, using the paramorphic approach, by growing the In0.65Ga0.35As laye rs lattice matched to an InAs0.25P0.75 seed membrane of predetermined latti ce parameter. The InAs0.25P0.75 layer was originally grown pseudomorphicall y strained on the InP substrate before being separated and elastically rela xed using surface micromachining. (C) 1999 American Institute of Physics. [ S0003-6951(99)03049-1].