Cyclotron resonance in modulation-doped ZnSe/Zn1-xCdxSe and ZnTe/CdSe single quantum wells

Authors
Ng, HK Leem, YA Knobel, R Smorchkova, IP Sirenko, AA Samarth, N
Citation
Hk. Ng et al., Cyclotron resonance in modulation-doped ZnSe/Zn1-xCdxSe and ZnTe/CdSe single quantum wells, APPL PHYS L, 75(23), 1999, pp. 3662-3664
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
23
Year of publication
1999
Pages
3662 - 3664
Database
ISI
SICI code
0003-6951(199912)75:23<3662:CRIMZA>2.0.ZU;2-X
Abstract
We report low-temperature (4.2 K) cyclotron resonance measurements on high- mobility, two-dimensional electron gases in modulation-doped ZnSe/Zn1-xCdxS e (x = 0.06, 0.12, and 0.24) single quantum wells, as well as in a modulati on-doped ZnTe/CdSe single quantum well. These experiments carried out in ma gnetic fields ranging up to 17 T yield reliable measurements of the effecti ve mass m(*) of conduction-band electrons in Zn1-xCdxSe alloys, including t he measurement of m* in cubic CdSe. (C) 1999 American Institute of Physics. [S0003-6951(99)02449-3].