Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

Authors
Pullin, MJ Hardaway, HR Heber, JD Phillips, CC
Citation
Mj. Pullin et al., Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices, APPL PHYS L, 75(22), 1999, pp. 3437-3439
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
22
Year of publication
1999
Pages
3437 - 3439
Database
ISI
SICI code
0003-6951(19991129)75:22<3437:TISNLD>2.0.ZU;2-I
Abstract
Negative luminescence operation is reported for p-n diode devices with type -II InAs/InAsSb strained-layer-superlattice active regions which have a spe ctral peak at 4.2 mu m and a negative luminescence efficiency of up to 20%. (C) 1999 American Institute of Physics. [S0003-6951(99)00248-X].