Quantum well heterostructures grown by molecular beam epitaxy on silicon-on-gallium arsenide substrates

Silicon-on-gallium arsenide (SonG) wafers have recently been proposed as op timal substrates for monolithic integration of GaAs-based optoelectronic de vices with silicon electronics. In this letter it is demonstrated that high quality quantum well heterostructures can be grown on SonG substrates unde r conditions consistent with the survival of pre-existing electronics. Phot oluminescence and cathodoluminescence measurements confirm that these layer s are sufficiently high quality to allow integration of light emitting and laser diodes on SonG substrates. (C) 1999 American Institute of Physics. [S 0003-6951(99)03648-7].