Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates

A study of the carrier dynamics of self-assembled InAs quantum dot structur es on InP (311)B substrates is presented. By time-resolved photoluminescenc e spectroscopy, an efficient carrier capture from the wetting layer into th e quantum dots is observed under high incident excitation condition. This b ehavior can be attributed to carrier relaxation assisted by the Auger effec t. Moreover, first excited states which have a fast decay time of similar t o 60 ps are observed under the same condition. These results demonstrate th e possibility of the realization of performance-improved injection lasers a t 1.55 mu m for optical telecommunication. (C) 1999 American Institute of P hysics. [S0003-6951(99)02348-7].