Diamond tip fabrication by air-plasma etching of diamond with an oxide mask

Citation
Fs. Baik et al., Diamond tip fabrication by air-plasma etching of diamond with an oxide mask, DIAM RELAT, 8(12), 1999, pp. 2169-2171
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
12
Year of publication
1999
Pages
2169 - 2171
Database
ISI
SICI code
0925-9635(199912)8:12<2169:DTFBAE>2.0.ZU;2-V
Abstract
We have fabricated an array of cone-shaped diamond tips for use as a field electron emitter by air-plasma etching a polycrystalline diamond film with a silicon oxide mask. The difference in etching speed between the mask and the diamond resulted in the formation of cone-shaped diamond tips. Post-tre atment with hydrogen plasma was effective in cleaning the diamond tips and increasing the surface conductivity. The emission from the diamond tips was measured with a diode configuration. The threshold field was 3 V mu m(-1), and the emission current was 0.8 nA tip(-1) when the held was raised to 10 V mu m(-1). (C) 1999 Elsevier Science S.A. All rights reserved.