Analysis and fabrication of GaInAs/InP MQW graded refractive index-type optical deflector

Authors
Sabrusajang, R Nitta, Y Shimomura, K
Citation
R. Sabrusajang et al., Analysis and fabrication of GaInAs/InP MQW graded refractive index-type optical deflector, ELEC C JP 2, 82(12), 1999, pp. 21-29
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
82
Issue
12
Year of publication
1999
Pages
21 - 29
Database
ISI
SICI code
8756-663X(199912)82:12<21:AAFOGM>2.0.ZU;2-W
Abstract
A new type of optical deflector with a graded refractive index region is pr oposed. For this device, two types of structure, a multielectrode type and a comblike electrode type, have been numerically analyzed using the finite difference beam propagation method to show results :such as the dependence of the deflection angle and the deflection efficiency on the structure. We fabricated this optical deflector using a GaInAs/InP MQW structure, and we confirmed the fundamental optical deflection and the wavelength dependence of the device. (C) 1999 Scripta Technica.