Overview of the Mossbauer results obtained on silicon-rich iron silicide epitaxial phases on Si

Iron silicide phases, grown on or into single-crystals of silicon, can be p roduced by different techniques as reactive and molecular beam epitaxy, and ion implantation followed by recrystallisation processes. Different phases have been obtained depending on the experimental conditions: thickness and substrate temperature for deposited layers, ion implantation fluence, subs trate temperature and recrystallisation technique for buried silicides. In most of these investigations, Mossbauer Effect has been used to provide sho rt range order information about the system. We present here a summary of t hese results, which in some cases are compared with those obtained by other characterisation techniques.