Temperature dependence of the Mossbauer effect on the semiconductors Pb0.78Sn0.22Te and Pb0.80Sn0.20Te : In

Authors
Ragimova, T Serrano, WAP Abras, A
Citation
T. Ragimova et al., Temperature dependence of the Mossbauer effect on the semiconductors Pb0.78Sn0.22Te and Pb0.80Sn0.20Te : In, HYPER INTER, 122(1-2), 1999, pp. 185-188
Citations number
9
Categorie Soggetti
Physics
Journal title
HYPERFINE INTERACTIONS
ISSN journal
03043843 → ACNP
Volume
122
Issue
1-2
Year of publication
1999
Pages
185 - 188
Database
ISI
SICI code
0304-3843(1999)122:1-2<185:TDOTME>2.0.ZU;2-N
Abstract
Crystals of the semiconductors Pb0.78Sn0.22Te and Pb0.80Sn0.20Te:In were gr own by Bridgman method, and investigated by Mossbauer spectroscopy and X-ra y diffraction. Mossbauer spectra were taken at temperatures between 80 and 300 K. The absence of the quadrupole splitting shows a cubic symmetry of th e environment for the tin atom, which is in accordance with X-ray data. The temperature dependence of the spectral area is discussed and the Debye tem perature is estimated.