A GSM900/DCS1800 dual-band MMIC power amplifier using outside-base/center-via-hole layout multifinger HBT

Authors
Mori, K Choumei, K Shimura, T Takagi, T Ikeda, Y Ishida, O
Citation
K. Mori et al., A GSM900/DCS1800 dual-band MMIC power amplifier using outside-base/center-via-hole layout multifinger HBT, IEICE TR EL, E82C(11), 1999, pp. 1913-1920
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E82C
Issue
11
Year of publication
1999
Pages
1913 - 1920
Database
ISI
SICI code
0916-8524(199911)E82C:11<1913:AGDMPA>2.0.ZU;2-Z
Abstract
A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transist or) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant v oltage bias circuits and a d.c. switch. In order to achieve high efficiency , the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedanc e and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power.-added efficiency of 53. 4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 4 1.8% for DCS1800.