A 100 WS-band AlGaAs/GaAs heterostructure FET for base stations of wireless personal communications

A 100W, low distortion AlGaAs/GaAs heterostructure FET has been developed f or CDMA cellular base stations. This FET employs the longest gate finger ev er reported of 800 mu m to shrink the chip size. The size of the chip and t he package are miniaturized to 1.24 x 2.6 mm(2) and 17.4 x 24.0 mm(2) respe ctively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-orde r intermodulation distortion and the power-added efficiency under the two-t one test condition (Delta f = 1 MHz) are -35 dBc and 24%, respectively at 4 2 dBm output power, that is 8 dB back off from the saturation power.