We consider II-VI narrow gap semiconducting alloys. mercury cadmium telluri
de, Hg(1-x)Cd(x)Te (MCT), mercury zinc telluride, Hg(1-x)Zn(x)Te (MZT), and
mercury zinc selenide, Hg(1-x)Zn(x)Se (MZS). MCT is emphasized for actual
calculations, but a table of values needed in all calculations is presented
. These materials are of interest because of their application to infrared
detectors and related devices, and because they are candidates for low grav
ity crystal growth to improve uniformity. We present new calculations of th
e scanning tunneling optical spectroscopy (STOS) current from which the loc
al energy gap, a function of x, and hence the stoichiometry (x) can be dete
rmined as a function of position with presumably high spatial resolution. T
he low temperature tunneling current (vs. photon frequency) has a sharper o
nset at the band gap than the low temperature optical absorption. This shar
p onset originates from the rapid increase in the integrated transmission p
robabilities and is greatly enhanced by large diffusion lengths. Thus, STOS
should be a competitive technique, compared to optical absorption, for det
ermining the local stoichiometry, a property that is important for characte
rizing crystals. (C) 1999 Published by Elsevier Science B.V. All rights res
erved.