POTENTIAL AND MODELING OF 1-MU-M 1GHZ SOI CMOS OTAS

Authors
EGGERMONT JP FLANDRE D RASKIN JP
Citation
Jp. Eggermont et al., POTENTIAL AND MODELING OF 1-MU-M 1GHZ SOI CMOS OTAS, Electronics Letters, 33(9), 1997, pp. 774-775
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
9
Year of publication
1997
Pages
774 - 775
Database
ISI
SICI code
0013-5194(1997)33:9<774:PAMO11>2.0.ZU;2-3
Abstract
High-frequency device models, design guidelines and frequency limitati ons are presented as well as layout and technology improvements to boo st the transconductance at high frequency and to reduce the substrate capacitances. Implementations of one-stage and folded-cascode op-amps have been realised to validate the design method.