NOISE MODELING OF DUAL-GATE MESFET

Authors
MARKOVIC V MILOVANOVIC B MALESILIC N
Citation
V. Markovic et al., NOISE MODELING OF DUAL-GATE MESFET, Electronics Letters, 33(9), 1997, pp. 820-821
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
9
Year of publication
1997
Pages
820 - 821
Database
ISI
SICI code
0013-5194(1997)33:9<820:NMODM>2.0.ZU;2-6
Abstract
A dual-gate MESFET noise model based on two cascaded single-gate MESFE T intrinsic equivalent circuits, is proposed. Four assigned equivalent temperatures are extracted together with the other model elements. A CAD oriented procedure is developed for the determination of dual-gate MESFET noise parameters over a wide frequency range.