Lanthanide doping in ZnS and SrS thin-film electroluminescent devices

Citation
Pd. Keir et al., Lanthanide doping in ZnS and SrS thin-film electroluminescent devices, J APPL PHYS, 86(12), 1999, pp. 6810-6815
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
12
Year of publication
1999
Pages
6810 - 6815
Database
ISI
SICI code
0021-8979(199912)86:12<6810:LDIZAS>2.0.ZU;2-P
Abstract
The relative high field transport efficiency and short wavelength electrolu minescence (EL) potential of the phosphors ZnS and SrS for alternating-curr ent thin-film electroluminescent (ACTFEL) device flat-panel display applica tions are assessed via a comparison of the EL spectra of ZnS and SrS ACTFEL devices prepared in a very similar manner and doped with the same lanthani de luminescent impurities: Dy, Er, Ho, Tb, and Tm. For all of the lanthanid e luminescent impurities studied, it is found that the the higher energy EL peaks are much more intense for SrS than for ZnS, even though the average phosphor field in SrS is smaller than in ZnS. These observations show SrS t o be a superior high-field electron transport material compared to ZnS. All of the ZnS EL spectra show a dramatic cut off in their EL intensities at a bout 440-460 nm; this suggests that ZnS is not an appropriate phosphor for blue light emission since its electron distribution does not appear to be a dequately heated to efficiently excite blue luminescent impurities. (C) 199 9 American Institute of Physics. [S0021-8979(99)07324-7].