Thermal conductivity of thick meso-porous silicon layers by micro-Raman scattering

Citation
V. Lysenko et al., Thermal conductivity of thick meso-porous silicon layers by micro-Raman scattering, J APPL PHYS, 86(12), 1999, pp. 6841-6846
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
12
Year of publication
1999
Pages
6841 - 6846
Database
ISI
SICI code
0021-8979(199912)86:12<6841:TCOTMS>2.0.ZU;2-A
Abstract
We report here a theoretical model describing specific mechanisms of heat t ransport in as-prepared and oxidized meso-porous silicon layers. The model is in good agreement with experimental measurements performed by micro-Rama n scattering on the layers surface. For the first time, thermal conductivit y inhomogeneity along the porous layer thickness of 100 mu m is studied. Di rect correlation between the thermal conductivity and morphology variations along the layer thickness is brought to the fore. A new approach to estima te local porosity of the porous layers based on thermal conductivity and Si nanocrystallite size measurements is also proposed. (C) 1999 American Inst itute of Physics. [S0021-8979(99)08124-4].