e(31) piezoelectric constant measurement of lead zirconate titanate thin films

Citation
E. Cattan et al., e(31) piezoelectric constant measurement of lead zirconate titanate thin films, J APPL PHYS, 86(12), 1999, pp. 7017-7023
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
12
Year of publication
1999
Pages
7017 - 7023
Database
ISI
SICI code
0021-8979(199912)86:12<7017:EPCMOL>2.0.ZU;2-9
Abstract
The piezoelectric constant e(31) measurement procedure is presented for spu ttered lead zirconate titanate (PZT) thin films deposited on silicon substr ates. With a simple cantilever used in the direct piezoelectric effect, it is possible to measure piezoelectric coefficients of unpoled and poled film s. We discuss the poling treatment effects; applied electric field amplitud e and duration on the piezoelectric response. We have registered a quasista tic piezoelectric hysteresis loop, and will show that the poling procedure can modify the symmetry of the hysteresis loop. The thin films were piezoel ectric in a virgin state, which causes the offset of the piezoelectric hyst eresis loops. The maximum remanent piezoelectric constant e(31) estimated f or sputtered PZT thin film is -4 C/m(2). (C) 1999 American Institute of Phy sics. [S0021-8979(99)00624-6].