N2O reactive gas effect on rf magnetron sputtered Pb(Zr0.52Ti0.48)O-3 thinfilms

In depositing Pb(Zr0.52Ti0.48)O-3 thin films by using rf magnetron sputteri ng process, N2O gas was used instead of oxygen as a reactive gas. In order to investigate an effect of this N2O gas on the electrical and structural p roperties of the thin films, a various range of thicknesses from 1000 to 40 00 Angstrom was deposited on the Pt/Ti/Si(100) substrate at a substrate tem perature of 520 degrees C, and then annealed in the range of 500-700 degree s C for enhancement of the crystallinity. The ratio of Ar and O-2(N2O) gas was 9:1. There were no apparent differences in crystallographic orientation between N2O and oxygen as reactive gases. However, the denser films were f abricated by using N2O gas, and the electrical properties, i.e., remanent p olarization, leakage currents and tan delta values were improved in the thi nner films (1000 Angstrom). (C) 1999 American Institute of Physics. [S0021- 8979(99)01224-4].