Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method

Lateral epitaxial overgrowth (LEO) of GaN by sublimation has been carried o ut to understand the dependence of growth conditions on the morphology and quality of the layers. Growth conditions have been optimised to have flat a nd smooth lateral overgrown surfaces with (1 1 (2) over bar 0) stripe windo w opening. The changing feature from triangular stripe to rectangular strip e growth with change in growth temperature have been observed using scannin g electron microscopy (SEM). Atomic force microscopy (AFM) result shows the dominance of step growth mechanism leading to two-dimensional growth in th e lateral overgrown GaN layers. (C) 1999 Elsevier Science B.V. All rights r eserved.