Nanoscale materials exhibit properties which differ considerably from their
bulk counterparts due to modifications of their phonon density of states d
ue to finite size effects. Rare earth doped insulating nanoparticles provid
e an ideal model system for studying the fundamental interactions between e
lectronic states and phonons since the narrow lines due to rare earth 4f(n)
--> 4f(n) transitions provide a high-resolution probe, while the insulatin
g host eliminates the additional complications of collective electronic int
eractions. In this paper we investigate how the size restricted geometry of
the nanoparticle influences (i) electronic relaxation by the one-phonon em
ission process and (ii) optical dephasing by the two-phonon Raman process.
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