Electron-phonon interaction in rare earth doped nanocrystals

Citation
Hs. Yang et al., Electron-phonon interaction in rare earth doped nanocrystals, J LUMINESC, 83-4, 1999, pp. 139-145
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
83-4
Year of publication
1999
Pages
139 - 145
Database
ISI
SICI code
0022-2313(199911)83-4:<139:EIIRED>2.0.ZU;2-D
Abstract
Nanoscale materials exhibit properties which differ considerably from their bulk counterparts due to modifications of their phonon density of states d ue to finite size effects. Rare earth doped insulating nanoparticles provid e an ideal model system for studying the fundamental interactions between e lectronic states and phonons since the narrow lines due to rare earth 4f(n) --> 4f(n) transitions provide a high-resolution probe, while the insulatin g host eliminates the additional complications of collective electronic int eractions. In this paper we investigate how the size restricted geometry of the nanoparticle influences (i) electronic relaxation by the one-phonon em ission process and (ii) optical dephasing by the two-phonon Raman process. (C) 1999 Elsevier Science B.V. All rights reserved.