Low-temperature luminescence and energy transfer processes in Eu3+, Nd3+, and Cr-doped sol-gel PLZT ceramics

Citation
S. Murakami et al., Low-temperature luminescence and energy transfer processes in Eu3+, Nd3+, and Cr-doped sol-gel PLZT ceramics, J LUMINESC, 83-4, 1999, pp. 215-219
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
83-4
Year of publication
1999
Pages
215 - 219
Database
ISI
SICI code
0022-2313(199911)83-4:<215:LLAETP>2.0.ZU;2-2
Abstract
Luminescence and decay times of sol-gel PLZT(9/65/35) ceramics doped with E u3+, Nd3+ and chromium ions are investigated to elucidate site occupancy an d energy transfer processes at lower temperatures down to 10 K, in comparis on with those prepared by mixed-oxide method. Luminescence and excitation e nergy transfer in sol-gel PLZT: Eu3+, Nd3+ are discussed with regard to tra pping-limited energy transfer processes with critical distances of about 0. 5 nm. The presence of three A sites in PLZT:Eu3+ under site-selective excit ations and two B sites in PLZT : Cr3+, Cr5+ in NIR emission are confirmed a t low temperatures. (C) 1999 Elsevier Science B.V. All rights reserved.