It is known that MgS : EU2 (+) /EU3 + shows the most promising characterist
ics of any frequency domain optical storage material (Hasan et al., Appl. P
hys. Lett. 72 (1998) 2373, 3399). Efficient photon-gated hole burning is ob
served in 4f(7)-4f(6) 5d(1) ZPL transition of Eu2 + in MgS. In this study,
the dynamics of hole burning and hole erasure is investigated. The dependen
ce of the holedepth and holewidth on the burning time and the burn power le
vels has been experimentally studied. To explain the experimental data a th
eoretical model has been developed. The model shows very good agreement wit
h the experimental data. The same model explains the behavior of the erasur
e and thermal cycling of holes. (C) 1999 Elsevier Science B.V. All rights r
eserved.