In this paper we use a combination of thermoluminescence, thermal quenching
, and spectroscopic techniques to investigate the interaction between Cui i
on (in RF sputtered SrS:Cu) and trap states which become incorporated in th
e thin films during the growth process. UV excitation was used to excite th
e Cu for both time resolved and intensity dependent studies. The thermolumi
nescence, thermal quenching, and temperature-dependent fluorescence transie
nt measurements were analyzed to obtain values for trap depths and frequenc
y factors. (C) 1999 Elsevier Science B.V. All rights reserved.