Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy

Authors
Jiang, WH Xu, HZ Xu, B Zhou, W Gong, Q Ding, D Liang, JB Wang, ZG
Citation
Wh. Jiang et al., Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy, J MAT SCI T, 15(6), 1999, pp. 523-526
Citations number
20
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN journal
10050302 → ACNP
Volume
15
Issue
6
Year of publication
1999
Pages
523 - 526
Database
ISI
SICI code
1005-0302(199911)15:6<523:ICDOTS>2.0.ZU;2-T
Abstract
The deposition of InxGa1-xAs (0.2 less than or equal to x less than or equa l to 0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed tha t homogeneous quantum dots could be formed on (311)B GaAs surface when indi um composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared wi th other surface orientation, (100) and (n11) A/B (n=1,2,3), photoluminesce nce measurement confirmed that (311)B surface is the most advantageous in f abricating uniform and dense quantum dots.