Oscillator strength of the infrared absorption band near 1080 cm(-1) in SiO2 films

It has been well known that the absorption maximum of the peak near 1080 cm (-1) in amorphous SiO2 films shifts continuously with variation of thicknes s and properties such as stress. This is a first report on the oscillator s trength of the absorption against frequency at the absorption maximum. SiO2 films on silicon wafers were prepared by thermal growth in either dry O-2 or an O-2/H-2 mixture or liquid-phase deposition in HF saturated with silic a gel. The oscillator strength continuously decreased from 1 x 10(-4) down to 1 x 10(-5) with the frequency shift from 1099 to 1063 cm(-1). (C) 1999 E lsevier Science B.V. All rights reserved.