Ab initio simulation of defects in energetic materials. Part I. Molecular vacancy structure in RDX crystal

Citation
Mm. Kuklja et Ab. Kunz, Ab initio simulation of defects in energetic materials. Part I. Molecular vacancy structure in RDX crystal, J PHYS CH S, 61(1), 2000, pp. 35-44
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
61
Issue
1
Year of publication
2000
Pages
35 - 44
Database
ISI
SICI code
0022-3697(200001)61:1<35:AISODI>2.0.ZU;2-#
Abstract
An attempt to simulate a point defect in energetic molecular solids and to find out its effect on the crystal electronic properties at the ab initio H artree-Fock level using two different solid-state models was performed. As an example, we have considered a molecular vacancy in RDX crystal. in the p eriodic and in the molecular cluster model. Low formation energy characteri zes this defect in the solid RDX indicating that a significant number of va cancies should be present in the crystal even at low temperatures. Narrowin g of fundamental gap (about 1 eV) is caused by the presence of vacancies in the material. The obtained results demonstrate anisotropy of the RDX cryst al with respect to the vacancy distribution. Trends received in periodic an d molecular cluster models agree well. (C) 1999 Elsevier Science Ltd. All r ights reserved.