Effect of thickness and strong illumination on the electrical conductivityof Se4Ge glasses

A study of the synthesized Se80Ge20 glassy system has been carried out. X-r ay diffraction patterns and differential thermal analysis thermograms of th e system studied were used to obtain an insight into the structural informa tion. The dependence of the electrical conductivity of amorphous thin films of vacuum evaporated Se4Ge, measured either in darkness or after different durations of light exposure on temperature and exposure time have been stu died for different thicknesses. The conductivity showed an initial gradual decrease with time, ending with saturation. The activation energy was found to increase by increasing the period of light soaking at any thickness. Th e results were explained on the basis that the conduction takes place in th e localized state in the band tails.