Flux growth of KTiOPO4 single crystals doped with Me4+ ions

Citation
V. Nikolov et al., Flux growth of KTiOPO4 single crystals doped with Me4+ ions, MATER RES B, 34(9), 1999, pp. 1403-1409
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
34
Issue
9
Year of publication
1999
Pages
1403 - 1409
Database
ISI
SICI code
0025-5408(19990701)34:9<1403:FGOKSC>2.0.ZU;2-P
Abstract
In the present work, potassium titanyl phosphate single crystals doped with different levels of Ge4+, Zr4+, and Ce4+ were successfully grown by flux u sing the top-seeded solution growth (TSSG) method. Their saturation tempera tures and crystal habits were compared with those of the undoped single cry stals and some differences were observed. In addition, the distribution coe fficients of the different dopants were also determined and found to be in correlation with the ionic radii of the M4+ ions. Zr4+ doping gives the mos t suitable distribution coefficient, does not introduce problematic absorpt ion bands in the visible region, and significantly reduces the ionic conduc tivity in the c direction, (C) 1999 Elsevier Science Ltd.