Structural and electrical properties of PLZT films on ITO-coated glass prepared by a sol-gel process

PLZT films prepared by a sol-gel process were fabricated on indium tin oxid e (ITO)-coated glass substrates using rapid thermal annealing (RTA). The fi lms crystallized into the perovskite phase when annealed at 750 degrees C f or 5 min. X-ray diffraction (XRD) and Raman spectroscopy results indicate t hat the morphotropic phase boundary of PLZT films shifts toward the Ti-rich side, in contrast to that of bull; ceramics. A dielectric constant of 1270 for the 2/55/45 composition was the maximum value observed. With increasin g Zr content in the 2 mol% La modified films, the coercive field decreased from 52.9 to 30 kV/cm and the remanent polarization increased from 22.7 to 50.6 mu C/cm(2) Optical transmittance increased by increasing optical isotr opy as the Zr content-increased. (C) 1999 Elsevier Science Ltd.