Polytypic transformations in SiC: An ab initio study

Citation
P. Kackell et al., Polytypic transformations in SiC: An ab initio study, PHYS REV B, 60(19), 1999, pp. 13261-13264
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
19
Year of publication
1999
Pages
13261 - 13264
Database
ISI
SICI code
0163-1829(19991115)60:19<13261:PTISAA>2.0.ZU;2-X
Abstract
Solid-solid phase transitions in SIC between two polytypes are investigated within an nb initio density-functional scheme, starting from a model based upon dislocations. As an example, the transformation from 6H SiC into the 3C polytype is studied in detail. The energy barrier for twinning a tetrahe dron is calculated to be about 0.77 eV per bond. It indicates that the disl ocation mechanism may be responsible for the temperature- and deformation-i nduced transitions observed experimentally. [S0163-1829(99)14139-0].