STM study of a Pb/Si(111) interface at room and low temperatures

Authors
Slezak, J Mutombo, P Chab, V
Citation
J. Slezak et al., STM study of a Pb/Si(111) interface at room and low temperatures, PHYS REV B, 60(19), 1999, pp. 13328-13330
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
19
Year of publication
1999
Pages
13328 - 13330
Database
ISI
SICI code
0163-1829(19991115)60:19<13328:SSOAPI>2.0.ZU;2-9
Abstract
The coexistence of Si(111)-(1X1)-Pb and Si0.28Pb0.72/Si(111) phases was inv estigated using scanning tunneling microscopy. Reversible phase transition Si(111)-(1x1)-Pb<-->Si(111)-c(5 X root 3)-Pb at T(C)approximate to -30 degr ees C was observed. Simultaneously, small regions with surface charge order ed states were found on Si0.28Pb0.7/Si(111) indicating a charge density wav e phase transition. Both phases were found to be stable in the temperature interval from T approximate to -240 degrees C up to T-C. [S0163-1829(99)102 33-1].