V. Emiliani et al., Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires, PHYS REV B, 60(19), 1999, pp. 13335-13338
We report on a near-field spectroscopic study of single V-shaped InxGa1-xAs
/GaAs quantum wires. With subwavelength resolution, the emission from singl
e InxGa1-xAs wires and connecting planar quantum wells-separated by 250 nm-
are individually resolved. The contributions of both monolayer height fluct
uations on a 100 nm length scale and of short range compositional disorder
to the localization of excitons in V-shaped quantum wires are separately id
entified and their implications for far-field PL spectra discussed. An uppe
r limit for the migration length of the photogenerated excitons within the
GaAs barrier layers of 250 nm is determined. [S0163-1829(99)01740-3].