A. Bansil et al., Electronic structure and magnetism of Fe3-xVxX (X=Si, Ga, and Al) alloys by the KKR-CPA method, PHYS REV B, 60(19), 1999, pp. 13396-13412
We present first-principles charge- and spin-self-consistent electronic str
ucture computations on the Heusler-type disordered alloys Fe3-xVxX for thre
e different metalloids X = (Si, Ga, and Al). In these calculations we use t
he methodology based on the Korringa-Kohn-Rostoker formalism and the cohere
nt-potential approximation generalized to treat disorder in multicomponent
complex alloys. Exchange correlation effects are incorporated within the lo
cal spin density approximation. Total energy calculations for Fe3-xVxSi sho
w that V substitutes preferentially on the Fe(B) site, not on the Fe(A,C) s
ite, in agreement with experiment. Furthermore, calculations have been carr
ied out for Fe3-xVxX alloys (with x = 0.25, 0.50, and 0.75), together with
the end compounds Fe3X and Fe2VX, and the limiting cases of a single V impu
rity in Fe3X and a single Fe(B) impurity in Fe2VX. We delineate clearly how
the electronic states and magnetic moments at various sites in Fe3-xVxX ev
olve as a function of the V content and the metalloid valence. Notably, the
spectrum of Fe3-xVxX (X = Al and Ga) develops a pseudogap for the majority
as well as minority spin states around the Fermi energy in the V-rich regi
me, which, together with local moments of Fe(B) impurities, may play a role
in the anomalous behavior of the transport properties. The total magnetic
moment in Fe3-xVxSi is found to decrease nonlinearly and the Fe(B) moment t
o increase with increasing x; this is in contrast to expectations of the "l
ocal environment" model, which holds that the total moment should vary line
arly while the Fe(B) moment should remain constant. The common-band model,
which describes the formation of bonding and antibonding states with differ
ent weights on the different atoms, however, provides insight into the elec
tronic structure of this class of compounds. [S0163-1829(99)11543-1].