Spin-flip Raman scattering of wide-band-gap II-VI ternary alloys

Spin-dip Raman scattering spectroscopy has been applied to the study of the wide band-gap semiconductor materials ZnSxSe1-x and Zn1-xMgxSe in order to determine the dependence on the composition, x, of the gyromagnetic ratio of electrons in the Gamma(6) conduction band and, thereby, to obtain a bett er understanding of the parameters underlying the band structure of these m aterials. The measured values are discussed in terms of the k.p perturbatio n theory for the band structure near the direct band gap, at different leve ls of approximation, and it is found that the observed dependence on compos ition can be reproduced well by the use of suitable interpolation schemes b etween the binary end members of the range of materials. Preliminary result s for the related quaternary material Zn1-xMgxSySe1-y are discussed within the same model. [S0163-1829(99)12139-8].