Characterizing composition modulations in InAs/AlAs short-period superlattices

The formation of quantum wires has much interest due to their novel electro nic properties which may lead to enhanced optoelectronic device performance and greater photovoltaic efficiencies. One method of forming these structu res is through spontaneous lateral modulation found during the epitaxial gr owth of III/V alloys. In this paper, we report and summarize our investigat ions on the formation of lateral modulation in the molecular-beam epitaxy g rown InAlAs/InP(001) system. This system was grown as a short-period superl attice where n monolayers of InAs are deposited followed by m monolayers of AlAs (with n and m similar to 2) and this sequence is repeated to grow a l ow strain InAlAs ternary alloy on InP(001) that exhibits lateral modulation . Films were grown under a variety of conditions (growth temperature, effec tive alloy composition, superlattice period, and growth rate). These films have been extensively analyzed using x-ray diffraction, atomic force micros copy, and transmission electron microscopy (TEM) and microcharacterization, in addition to photon-based spectroscopes. Here we present results of seve ral microstructural characterizations using a wide range of TEM-based techn iques, and compare them to results from the other methods to obtain a unifi ed understanding of composition modulation. Two strong points consistently emerge:(1) The lateral modulation wavelength is insensitive to growth tempe rature and effective alloy composition, but the strength of the lateral mod ulation is greatest near an effective alloy composition of In0.46Al0.54As, which corresponds to a slightly tensile global strain with respect to InP. (2) The composition variation for the strongly modulated films is as much a s 0.38 InAs mole fraction. in addition, for these strongly modulated films, the modulation wave is asymmetric showing strongly peaked, narrower InAs-r ich regions separated by flat AlAs-rich regions. We discuss these results a nd their possible implications in addition to detailing the techniques used to obtain them. [S0163-1829(99)10743-4].