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In this paper, we present a highly accurate and effective theoretical model
to study electron transport and interference in quantum cavities with arbi
trarily complex boundaries. Based on this model, a variety of quantum effec
ts can be studied and quantified. In particular, this model provides inform
ation on the transient state of the system under study, which is important
for analyzing nanometer-scale electronic devices such as high-speed quantum
transistors and quantum switches.